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IS62WV25616EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV25616EALL).
  • 2.2V-3.6V VDD (IS62/65WV25616EBLL).
  • 3.3V +/-5% VDD (IS62/65WV25616ECLL).
  • Package : 44-pin TSOP (Type II) 48-pin mini BGA.
  • Commercial, Industrial and Automotive temperature support.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2018 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EBLL) – 3.3V +/-5% VDD (IS62/65WV25616ECLL)  Package : 44-pin TSOP (Type II) 48-pin mini BGA  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.