RD38F4050L0Z system equivalent, (rd38f4455lvy / rd38f4050l0z) wireless memory system.
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Device Architecture
* xRAM Performance — Code and data segment: 128- and 256— PSRAM at 1.8 V I/O : 85 ns initial Mbit density; PSRA.
This device integrates up to three flash dies, two PSRAM dies, and one SRAM die in a low-profile package compatible wit.
at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for confl.
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