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IFN3954 Datasheet

N-Channel Matched Dual Silicon Junction Field-Effect Transistor

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8/2014 B11
IFN3954, IFN3955, IFN3956, IFN3957, IFN3958
N-Channel Matched Dual Silicon Junction Field-Effect Transistor
· Improved Replacement for the
2N3954, 2N3955, 2N3456, 2N3457, &
2N3958
· Differential Inputs
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -50V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 250 mW
Power Derating
2.6 mW/oC
Operating Temperature Range -55°C to +125°C
Storage Temperature Range
-65oC to +150oC
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Current
Gate Source Cutoff Voltage
Drain Saturation Current (pulsed)
Gate Source Voltage
Gate Source Forward Voltage
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Noise Factor RG = 10 MΩ
V(BR)GSS
IGSS
IG
VGS(OFF)
IDSS
VGS
VGS(F)
gfs
gos
Ciss
Crss
NF
Differencial Gate-Source
Voltage
Differencial Gate Source
Voltage with Temperature
│VGS1-VGS2
∆│VGS1-VGS2
3954, 3955, 3956, 3957, 3958
Min Typ Max
-50
-100
-500
-50
-250
-1 -4.5
0.5 5
-4.2
-0.5 -4
2
Unit
V
pA
nA
pA
nA
V
mA
V
V
1
1
3954
Max
5
0.8
1.0
3955
Max
10
2
2.5
3
35
4
1.2
0.5
3956 3957
Max Max
mS
µS
pF
pF
dB
3958
Max
15 20 25
468
5 7 10
Differential Gate Current
│IG1-IG2
10 10 10 10 10
Saturation Drain Source Ratio IDSS1/IDSS2
Transconductance Ratio
gfs 1/ gfs 2
Min Min Min Min Min
0.95 0.95 0.95 0.90 0.85
0.97 0.97 0.95 0.90 0.85
Process NJ16
Test Conditions
IG = -1 uA, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = 20 V, ID = 200 uA
VDS = 20 V, IG = 1 nA
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 50 uA
VDS = 20 V, ID = 200 uA
VDS = 0 V, IG = 1 mA
125°C
125°C
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
1 kHz
200 MHz
f = 1 kHz
f = 1 MHz
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDS = 20 V, VGS = 0 V
f = 1 kHz
Test
Unit Conditions
TA
mV
VDG = 20 V,
ID = 200 uA
mV
VDG = 20 V,
ID = 200 uA
25°C to -55°C
25°C to 125°C
nA
VDG = 20 V,
ID = 200 uA
125°C
VDG = 20 V, VGS = 0 V
VDG = 20 V, ID = 200 uA 1 kHz
Dimensions
in Inches (mm)
SOIC-8 Package
Pin Configuration
SMP3954, SMP3955, SMP3956, 1-G1, 2-D1, 3-S1, 4-G2,
SMP3957, SMP3958
5-G2, 6-D2, 7-S2, 8-G1
TO-71:
IFN3954, IFN3955, IFN3956,
IFN3957, IFN3958
Pin Configuration
1-S1, 2-D1, 3-G1,
4-S2, 5-D2, 6-G2
715 N. Glenville Dr., Ste. 400
Richardson, TX 75081
(972) 238-9700 Fax (972) 238-5338
www.interfet.com


Part Number IFN3954
Description N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Maker InterFET
Total Page 1 Pages
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