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IFN412 Datasheet

N-Channel Matched Dual Silicon Junction Field-Effect Transistor

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8/2014
IFN410, IFN411, IFN412
N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Improved Replacements for the
U410, U411, & U412
Low Noise Differential Amplifier
Differential Amplifier
Wide-Band Amplifier
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -40V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 375 mW
Power Derating
3.0 mW/oC
Operating Temperature Range
Storage Temperature Range
-55°C to +125°C
-65oC to +150oC
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown
Voltage
V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current
(pulsed)
IGSS
VGS(OFF)
VGS
IDSS
Gate Current
IG
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
gfs
Common-Source Output
Conductance
gos
Common-Source Input
Capacitance
Ciss
Common-Source Reverse
Transfer Capacitance
Equivalent Short Circuit Input
Noise Voltage
Crss
~eN
Min
-40
-0.5
-0.2
0.5
1
0.6
410, 411, 412
Typ Max
Unit
V
-0.2 nA
-3.5 V
-3 V
5 mA
-200 pA
Process NJ16
Test Conditions
IG = -1uA, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = 20 V, ID = 1 nA
VDS = 20 V, ID = 200 uA
VDS = 20 V, VGS = 0 V
VDS = 10 V, ID = 200 uA
4
1.2
mS
VDS = 20 V, VGS = 0 V f = 1
VDS = 20 V, ID = 200 uA kHz
20
5
uS
VDS = 20 V, VGS = 0 V f = 1
VDS = 20 V, ID = 200 uA kHz
4.5
pF
VDS = 20V, VGS = 0 V
f=1
MHz
1.2
pF
VDS = 20 V, VGS = 0 V
f=1
MHz
50
nV/√Hz
VDS = 20 V, ID = 200uA
f = 100
Hz
Matching Characteristics
410 411 412 Units Test Conditions
Differential Gate-Source Voltage VGS1-VGS2
10 20 40 mV VDG = 20 V, ID = -200 uA
Differential Gate Source Voltage Δ│VGS1-VGS2
with Temperature
ΔT
10
25
80
μV/°C
VDG = 20 V, ID = 200 μA
25°C to 85°C
Common Mode Rejection Rate
CMRR (typ)
80
80
70
dB
VDD = 10 V to VDD = 20 V
ID = 200 uA
SOIC-8 Package Pin Configuration
SMPU410, SMPU411, 1-G1, 2-D1, 3-S1, 4-G2,
SMPU412
5-G2, 6-D2, 7-S2, 8-G1
TO-71:
Pin Configuration
IFN410, IFN 411, IFN 412, 1-S1, 2-D1, 3-G1,
4-S2, 5-D2, 6-G2
Dimensions in Inches (mm)
715 N. Glenville Dr., Ste. 400
Richardson, TX 75081
(972) 238-9700 Fax (972) 238-5338
www.interfet.com


Part Number IFN412
Description N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Maker InterFET
Total Page 1 Pages
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