IFN410 - N-Channel Matched Dual Silicon Junction Field-Effect Transistor

InterFET

Datasheet Details

Part number	IFN410
Manufacturer	InterFET
File Size	461.76 KB
Description	N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Datasheet	IFN410 Datasheet

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Other Datasheets by InterFET

Part Number	Description
IFN411	N-Channel Matched Dual Silicon Junction Field-Effect Transistor
IFN412	N-Channel Matched Dual Silicon Junction Field-Effect Transistor
IFN40	N-Channel JFET
IFN421	Dual Matched N-Channel JFET
IFN422	Dual Matched N-Channel JFET

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8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 375 mW Power Derating 3.0 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS -40 Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) -0.5 VGS -0.2 IDSS 0.