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IFN412 - N-Channel Matched Dual Silicon Junction Field-Effect Transistor

This page provides the datasheet information for the IFN412, a member of the IFN410 N-Channel Matched Dual Silicon Junction Field-Effect Transistor family.

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Datasheet Details

Part number IFN412
Manufacturer InterFET
File Size 461.76 KB
Description N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Datasheet download datasheet IFN412 Datasheet
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Other Datasheets by InterFET
  • IFN410 - N-Channel Matched Dual Silicon Junction Field-Effect Transistor
  • IFN411 - N-Channel Matched Dual Silicon Junction Field-Effect Transistor
  • IFN40 - N-Channel JFET
  • IFN421 - Dual Matched N-Channel JFET
  • IFN422 - Dual Matched N-Channel JFET
  • IFN423 - Dual Matched N-Channel JFET
  • IFN105 - N-Channel JFET
  • IFN113 - N-Channel JFET

Full PDF Text Transcription

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8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 375 mW Power Derating 3.0 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS -40 Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) -0.5 VGS -0.2 IDSS 0.
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