ELECTRICAL CHARACTERISTICS
Min Gate Source Breakdown Voltage V(BR)GSS -40 Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) -0.5 VGS -0.2 IDSS 0.5 Gate Current IG Dynamic ELECTRICAL CHARACTERISTICS
Common-Source Forward Transconductance gfs 1 0.6 Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN 410, 411, 412 Typ Max Unit V -0.2 nA -3.5 V -3 V 5 mA -200 pA Process NJ16 Test Conditions IG = -1uA, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, ID = 200 uA VDS = 20 V, VGS = 0 V VDS = 10 V, ID = 200 uA 4 1.2 mS VDS = 20 V, VGS = 0 V f = 1 VDS = 20 V, ID = 200 uA kHz 20 5 uS VDS = 20 V, VGS = 0 V f = 1 VDS = 20 V, ID = 200 uA kHz 4.5 pF VDS = 20V, VGS = 0 V f=1 MHz 1.2 pF VDS = 20 V, VGS = 0 V f=1 MHz 50 nV/√Hz VDS = 20 V, ID = 200uA f = 100 Hz Matching Characteristics 410 411 412 Units...
InterFET