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IFN411 - N-Channel Matched Dual Silicon Junction Field-Effect Transistor

Download the IFN411 datasheet PDF. This datasheet also covers the IFN410 variant, as both devices belong to the same n-channel matched dual silicon junction field-effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IFN410-InterFET.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IFN411
Manufacturer InterFET
File Size 461.76 KB
Description N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Datasheet download datasheet IFN411 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 375 mW Power Derating 3.0 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS -40 Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) -0.5 VGS -0.2 IDSS 0.