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International Rectifier Electronic Components Datasheet

50MT060ULS Datasheet

LOW SIDE CHOPPER IGBT MTP

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"LOW SIDE CHOPPER" IGBT MTP
I27123 rev. C 02/03
50MT060ULS
Ultrafast Speed IGBT
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED TM Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
VCES = 600V
IC = 100A,
TC = 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
IF
IFM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 122°C
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
@ TC = 100°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
IGBT
Diode
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
www.irf.com
Max
600
100
50
200
200
48
200
± 20
2500
445
175
205
83
Units
V
A
V
W
1


International Rectifier Electronic Components Datasheet

50MT060ULS Datasheet

LOW SIDE CHOPPER IGBT MTP

No Preview Available !

50MT060ULS
I27123 rev. C 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
VCE(on) Collector-to-Emitter Voltage
VGE(th) Gate Threshold Voltage
BVR Diode Reverse Breakdown Voltage
VGE(th)/ Temperature Coeff. of
TJ Threshold Voltage
gfe Forward Transconductance
ICES
Collector-to-Emiter Leaking Current
3
600
22
VFM Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
1.69
1.96
1.88
- 13
2.31
2.55
2.24
6
V
mV/°C
VGE = 0V, IC = 250µA
VGE = 15V, IC = 50A
VGE = 15V, IC = 100A
VGE = 15V, IC = 100A, TJ = 150°C
IC = 0.5mA
IR = 200µA
VCE = VGE, IC = 500µA
29 S VCE = 50V, IC = 100A
0.25 mA VGE = 0V, VCE = 600V
6 VGE = 0V, VCE = 600V, TJ = 150°C
1.64 1.82 V IF = 100A, VGE = 0V
1.56 1.74
IF = 100A, VGE = 0V, TJ = 150°C
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on)
Qge Gate-Emitter Charge (turn-on)
Qgc Gate-Collector Charge (turn-on)
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Cies
Coes
Cres
Ct
trr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Junction Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Current
Qrr Diode Recovery Charge
di(rec)M/dt Diode PeakRate of Fall of Recovery
During tb
370
64
163
0.7
1.7
2.4
1.1
2.5
3.6
9800
602
121
118
99
6.5
320
236
555
96
245
1.2
2.6
3.8
1.7
3.8
5.5
14700
903
182
177
150
9.8
735
nC
mJ
mJ
pF
ns
A
nC
A/µs
IC = 100A
VCC = 480V
VGE = 15V
IC = 50A, VCC = 480V, VGE = 15V,
Rg = 5
Energy losses include tail and diode reverse
recovery
IC = 50A, VCC = 480V, VGE = 15V
Rg = 5Ω, TJ = 125°C
Energy losses include tail and diode reverse
recovery
VGE = 0V
VCC = 30V
f = 1.0 MHz
Vr = 600V, f = 1.0 MHz
VCC = 480V, IC = 50A
di/dt = 200A/µs
Rg = 5
2 www.irf.com


Part Number 50MT060ULS
Description LOW SIDE CHOPPER IGBT MTP
Maker International Rectifier
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50MT060ULS Datasheet PDF






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