MTP Datasheet | Specifications & PDF Download

JMTP130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ V

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Preliminary W78IE54 8-BIT MTP MICROCONTROLLER GENERAL DESCRIPTION The W78IE54 is an 8-bit microcontroller which can accommodate a wide supply voltage

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor Designer's MTP

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10EL/D ™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor Desig

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NJM2743 www.DataSheet4U.com Single-Supply High Output Current Single Operational Amplifier ■GENERAL DESCRIPTION The NJM2743 is a high gain, high outp

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MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel

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www.vishay.com VS-100MT060WDF Vishay Semiconductors Primary MTP IGBT Power Module MTP PRODUCT SUMMARY FRED Pt® AP DIODE, TJ = 150 °C VRRM 600 V

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TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to p

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SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0

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SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0

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SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0

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MTP1N100E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advan

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NY8BM72A NY8BM72A 18 I/O + 13-ch ADC 8-bit MTP-Based MCU Version 1.2 Jun. 24, 2020 ChipSourceTek Technology Co. reserves the right to change this docu

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JMTP160P03D Description JMT Dual P-channel Enhancement Mode Power MOSFET Features  VDS= -30V, ID= -11A RDS(ON) <17mΩ @ VGS = -10V RDS(ON) < 27mΩ @

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YS65F804 YSPRING YS65F804 1.0 （ V1.3） 8 MTP CMOS  ： MTP ：2K*14 。 1000 。 SRAM ：128 。 CS SRAM：32 。  8  I/O 6 I/O ：PA 6 PA3：，（open drain

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JMTP9926B Description JMT Dual N-channel Enhancement Mode Power MOSFET Features  20V, 6A RDS(ON) < 27mΩ @ VGS = 4.5V RDS(ON) < 33mΩ @ VGS = 2.5V 

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