MTP50N06V Datasheet - Motorola

MTP50N06V N-Channel Power FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low.

MTP50N06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified

MTP50N06V Datasheet (179.52 KB)

MTP50N06V Datasheet Preview — Preview of MTP50N06V PDF

Datasheet Details

Part number:

MTP50N06V

Manufacturer:

Motorola

File Size:

179.52 KB

Description:

N-channel power fet.

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MTP50N06V N-Channel Power FET Motorola

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