MTP50N06VL Datasheet - Motorola

MTP50N06VL N-Channel Power FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for .

MTP50N06VL Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified

MTP50N06VL Datasheet (195.75 KB)

MTP50N06VL Datasheet Preview — Preview of MTP50N06VL PDF

Datasheet Details

Part number:

MTP50N06VL

Manufacturer:

Motorola

File Size:

195.75 KB

Description:

N-channel power fet.

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MTP50N06VL N-Channel Power FET Motorola

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