* erated into an inductive load; however, snubbing reduces switching losses. TJ = 25°C Ciss Coss GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP50N06EL VGS, GATE
* TO
MTP50N06EL Datasheet (232.48 KB)
MTP50N06EL
Motorola
232.48 KB
N-channel power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
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