Download the AUIRF1010ZL datasheet PDF.
This datasheet also covers the AUIRF1010Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Key Features
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
l l l l l
D
HEXFET® Power MOSFET
AUIRF1010Z AUIRF1010ZS AUIRF1010ZL
55V 7.5mΩ 94A 75A
D
V(BR)DSS RDS(on) max. ID (Silicon Limited)
G S.
Note: The manufacturer provides a single datasheet file (AUIRF1010Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF1010ZL (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF1010ZL. For precise diagrams, and layout, please refer to the original PDF.
PD - 97458 AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjm...
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ting Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l l l l l D HEXFET® Power MOSFET AUIRF1010Z AUIRF1010ZS AUIRF1010ZL 55V 7.5mΩ 94A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S Description www.DataSheet4U.com Specifically designed for Automotive applications, ID (Package Limited) D this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche ratin
AUIRF1010ZL Datasheet
