AUIRF2805 Datasheet, International Rectifier

l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-.

this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistan.

AUIRF2805 HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 3.9m 4.7m 175A 75A G S ID (Package Limited) D Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes t.