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AUIRF6218L - Power MOSFET

Download the AUIRF6218L datasheet PDF. This datasheet also covers the AUIRF6218S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF6218S-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF6218L Power MOSFET Infineon
AUIRF6218S Power MOSFET Infineon
AUIRF6215S Power MOSFET Infineon
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF6218S Power MOSFET
AUIRF6215 Power MOSFET
AUIRF6215S Power MOSFET
AUIRF1010EZ Power MOSFET
AUIRF1010EZL Power MOSFET

Full PDF Text Transcription

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AUTOMOTIVE GRADE Features l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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