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International Rectifier Electronic Components Datasheet

AUIRF8739L2 Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRF8739L2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
0.35m
0.6m
545A
375nC
S
S
D
G
S
S
S
S
SD
S
Applicable DirectFET® Outline and Substrate Outline
L8
DirectFET2 L-can
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRF8739L2
Package Type
DirectFET®
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF8739L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package limit)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
PD @TA = 25°C Power Dissipation
EAS
Single Pulse Avalanche Energy (Thermally Limited)
EAS (Tested)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
*Qualification standards can be found at http://www.irf.com/
Max.
40
545
385
57
375
1150
340
3.8
312
1500**
See Fig. 14, 15, 22a, 22b
Units
V
A
W
mJ
A
270
mJ
-55 to + 175
°C
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
February 17, 2015


International Rectifier Electronic Components Datasheet

AUIRF8739L2 Datasheet

Power MOSFET

No Preview Available !

AUIRF8739L2TR
Thermal Resistance
Symbol
RJA
RJA
RJA
RJ-Can
RJ-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can 
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
0.44
0.5
2.3
Units
°C/W
W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.03 ––– V/°C Reference to 25°C, ID = 5.0mA
––– 0.35 0.60 mVGS = 10V, ID = 195A
2.2 ––– 3.9 V VDS = VGS, ID = 250µA
VGS(th)/TJ
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -12 ––– mV/°C
250 ––– ––– S VDS = 10V, ID = 195A
RG
Internal Gate Resistance
––– 0.81 –––
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– 375 562
VDS = 20V
Qgs1
Gate-to-Source Charge
––– 60 –––
VGS = 10V
Qgs2
Gate-to-Source Charge
––– 40 ––– nC ID = 195A
Qgd
Gate-to-Drain ("Miller") Charge
––– 120 –––
Qgodr
Gate Charge Overdrive
––– 155 –––
Qsw
Switch Charge (Qgs2 + Qgd)
––– 160 –––
Qoss
Output Charge
td(on)
Turn-On Delay Time
––– 151 –––
––– 34 –––
nC VDS = 32V, VGS = 0V
VDD = 20V, VGS = 10V
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 117 –––
––– 120 –––
––– 95 –––
ID = 195A
ns
RG = 1.8
Ciss
Input Capacitance
––– 17890 –––
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 2640 –––
––– 1830 –––
VDS = 25V
pF ƒ = 500 kHz
Coss eff.
Effective Output Capacitance
––– 3785 –––
VGS = 0V, VDS = 0V to 32V
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
February 17, 2015


Part Number AUIRF8739L2
Description Power MOSFET
Maker International Rectifier
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AUIRF8739L2 Datasheet PDF






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