Datasheet4U Logo Datasheet4U.com

AUIRF8736M2TR Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

SC M2 M4 M4 DirectFET® ISOMETRIC L4 L6 L8 The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Overview

  AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET            Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ.

max.

ID (Silicon Limited) Qg          40V 1.3m 1.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.