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AUIRF8736M2TR - Power MOSFET

Description

SC M2 M4 M4 DirectFET® ISOMETRIC L4 L6 L8 The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm prof

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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  AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET            Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg          40V 1.3m 1.
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