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AUIRF8739L2 - Power MOSFET

This page provides the datasheet information for the AUIRF8739L2, a member of the AUIRF8739L2TR Power MOSFET family.

Description

The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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AUTOMOTIVE GRADE AUIRF8739L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Allowed up to Tjmax  Lead Free, RoHS Compliant and Halogen Free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 0.35m 0.
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