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AUIRFZ48ZS - Power MOSFET

Download the AUIRFZ48ZS datasheet PDF. This datasheet also covers the AUIRFZ48Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRFZ48Z AUIRFZ48ZS 55V 11mΩ 61A V(BR)DSS RDS(on) max. ID G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFZ48Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFZ44N Power MOSFET Infineon
AUIRFZ44VZS Power MOSFET Infineon
AUIRFZ44Z Power MOSFET Infineon
AUIRFZ44ZS Power MOSFET Infineon
AUIRFZ24NL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFZ48Z Power MOSFET
AUIRFZ48N HEXFET Power MOSFET
AUIRFZ44NL Power MOSFET
AUIRFZ44NS Power MOSFET
AUIRFZ44V Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97612A AUTOMOTIVE GRADE Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRFZ48Z AUIRFZ48ZS 55V 11mΩ 61A V(BR)DSS RDS(on) max. ID G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .