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AUIRGF66524D0 - INSULATED GATE BIPOLAR TRANSISTOR

Download the AUIRGF66524D0 datasheet PDF. This datasheet also covers the AUIRGP66524D0 variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Guaranteed Square RBSOA and 100% Clamp IL Tested Positive VCE(on) Temperature Coefficient Ultra Fast Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant, Automotive Qualified.
  •  C G E n-channel G Gate   GCE TO-247AC GC E TO-247AD AUIRGP66524D0 AUIRGF66524D0 C Collector E Emitter   Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGP66524D0-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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AUIRGB4062D1 IGBT Infineon
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRGF65G40D0 ULTRAFAST IGBT
AUIRG4BC30U-S UltraFast Speed IGBT
AUIRG4BC30U-SL UltraFast Speed IGBT
AUIRG4PC40S-E Insulated Gate Bipolar Transistor
AUIRG4PH50S Standard Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  COOLiRIGBT™  AUTOMOTIVE GRADE AUIRGP66524D0 AUIRGF66524D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V INOMINAL = 24A Tsc 6µs, TJ(MAX) = 175°C VCE(ON) typ. = 1.