AUIRGP4063D - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	AUIRGP4063D
Manufacturer	International Rectifier
File Size	332.60 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGP4063D-InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA G.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode E n-channel.
Tight parameter distribution.
Lead Free Package C VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on.

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Published: Dec 17, 2014 |