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International Rectifier Electronic Components Datasheet

AUIRGP65G40D0 Datasheet

ULTRAFAST IGBT

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AUTOMOTIVE GRADE
AUIRGP65G40D0
AUIRGF65G40D0
CooliRIGBT
Features
Designed And Qualified for Automotive Applications
Ultra Fast Switching IGBT:70-200kHz
Extremely Low Switching Losses
Maximum Junction Temperature 175 °C
Square RBSOA
Positive VCE (on) Temperature Coefficient
ULTRAFAST IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.8V
IC@TC=100°C = 41A
TJ max = 175°C
Benefits
Optimized High Frequency Switching Applications
Rugged Transient Performance for Increased
Reliability
Excellent Current Sharing in Parallel Operation
Applications
DC-DC Converter
PFC
E
GC
TO-247AC
AUIRGP65G40D0
G
G a te
C
C o lle c to r
G CE
TO-247AD
AUIRGF65G40D0
E
E m itte r
Base part number
AUIRG P65G40D0
AUIRG F65G40D0
Absolute Maximum Ratings
Package Type
TO -247AC
TO -247AD
Standard Pack
Form
Q u an t it y
Tube
25
Tube
25
O rderable Part Number
AUIRG P65G40D0
AUIRG F65G40D0
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V CE S
IC @ TC = 25°C
IC @ TC = 100°C
INOMINA L
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
V GE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Collector-to-Emitter Voltage
hContinuous Collector Current
hContinuous Collector Current
iNominal Current @ 200kHz
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
dMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
62
41
20
84
112
46.1
30
112
±20
625
313
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
10 lbf·in (1.1 N·m)
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fJunction-to-Case-(each IGBT)
fJunction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.24
1.78
–––
40
Units
°C/W
––– 6.0 (0.21)
–––
g (oz)
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
September 8, 2015


International Rectifier Electronic Components Datasheet

AUIRGP65G40D0 Datasheet

ULTRAFAST IGBT

No Preview Available !

AUIRGP/F65G40D0
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
600 —
— 0.18
— 1.4
— 1.8 2.2
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.9 —
— 2.6 —
— 2.2 —
— 3.0 —
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
3.0 — 5.5
— -12 —
— 36 —
ICES Collector-to-Emitter Leakage Current
— 3.2 25
— 0.81 —
VFM Diode Forward Voltage Drop
— 1.7 2.45
— 1.4 —
IGES Gate-to-Emitter Leakage Current
— — ±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Coes eff.
Coes eff. (ER)
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gEffective Output Capacitance (Time Related)
gEffective Output Capacitance (Energy Related)
180
28
64
298
147
445
35
12
142
15
630
137
767
33
12
165
16
4673
337
58
406
162
270
42
96
389
234
623
53
29
163
32
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
Irr Peak Reverse Recovery Current
— 41 —
— 70 —
— 116 —
— 580 —
— 4.8 —
— 7.2 —
Units
Conditions
eV VGE = 0V, IC = 500µA
V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
IC = 12A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 25°C
IC = 12A, VGE = 15V, TJ = 150°C
V IC = 20A, VGE = 15V, TJ = 150°C
IC = 12A, VGE = 15V, TJ = 175°C
IC = 20A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
S VCE = 50V, IC = 20A
µA VGE = 0V, VCE = 600V
mA VGE = 0V, VCE = 600V, TJ = 175°C
V IF = 20A
IF = 20A, TJ = 175°C
nA VGE = ±20V
Units
Conditions
IC = 20A
nC VGE = 15V
VCC = 400V
IC = 20A, VCC = 400V, VGE = 15V
µJ RG = 4.7, L = 485µH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 400V, VGE = 15V
ns RG = 4.7, L = 485µH, TJ = 25°C
IC = 20A, VCC = 400V, VGE=15V
µJ RG = 4.7, L = 485µH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 400V, VGE = 15V
ns RG = 4.7, L = 485µH
TJ = 175°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
VGE = 0V, VCE = 0V to 480V
TJ = 175°C, IC = 80A
VCC = 480V, Vp ” 600V
Rg = 4.7, VGE = +20V to 0V
ns TJ = 25°C IF = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
nC TJ = 25°C IF = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
A TJ = 25°C IF = 20A, VR = 200V,
TJ = 125°C di/dt = 200A/µs
Notes  through ‡ are on page 13
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
September 8, 2015


Part Number AUIRGP65G40D0
Description ULTRAFAST IGBT
Maker International Rectifier
Total Page 15 Pages
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