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AUIRLB3036 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

AUTOMOTIVE GRADE AUIRLB3036.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 1.9mΩ cmax. 2.4mΩ G ID (Silicon Limited) 270A S ID (Package Limited) 195A D.