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AUIRLU024N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD- 96348 AUTOMOTIVE GRADE.

Download the AUIRLU024N datasheet PDF. This datasheet also includes the AUIRLR024N variant, as both parts are published together in a single manufacturer document.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D S G D S D-Pak AUIRLR024N I-Pak AUIRLU024N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.065Ω 17A G S RDS(on) max. ID D D.

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