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AUIRLU024N - Power MOSFET

Download the AUIRLU024N datasheet PDF. This datasheet also covers the AUIRLR024N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic-Level Gate Drive.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR024N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLU024N Power MOSFET International Rectifier
AUIRLU024Z Power MOSFET International Rectifier
AUIRLU2905 HEXFET Power MOSFET International Rectifier
AUIRLU3110Z Power MOSFET International Rectifier
AUIRLU3114Z Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRLU024Z Power MOSFET
AUIRLU2905 Power MOSFET
AUIRLU3114Z Power MOSFET
AUIRL1404L Power MOSFET
AUIRL1404S Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.