AUIRLU024N Datasheet PDF (Power MOSFET) | Download Infineon AUIRLU024N

AUIRLU024N - Power MOSFET

This page provides the datasheet information for the AUIRLU024N, a member of the AUIRLR024N Power MOSFET family.

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

Advanced Planar Technology.
Low On-Resistance.
Logic-Level Gate Drive.
Dynamic dv/dt Rating.
175°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
.

Datasheet Details

Part number	AUIRLU024N
Manufacturer	Infineon
File Size	474.18 KB
Description	Power MOSFET
Datasheet	AUIRLU024N Datasheet
Additional preview pages of the AUIRLU024N datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Published: Dec 8, 2016 |