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AUIRLU024N - Power MOSFET

Download the AUIRLU024N datasheet PDF. This datasheet also covers the AUIRLR024N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Key Features

  • l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.065Ω 17A G S RDS(on) max. ID D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR024N_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLU024N Power MOSFET Infineon
AUIRLU024Z Power MOSFET Infineon
AUIRLU2905 Power MOSFET Infineon
AUIRLU3114Z Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRLU024Z Power MOSFET
AUIRLU2905 HEXFET Power MOSFET
AUIRLU3110Z Power MOSFET
AUIRLU3114Z Power MOSFET
AUIRL1404L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 96348 AUTOMOTIVE GRADE Features l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 0.065Ω 17A G S RDS(on) max. ID D D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.