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AUIRLU024Z - Power MOSFET

Download the AUIRLU024Z datasheet PDF. This datasheet also covers the AUIRLR024Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Logic Level.
  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR024Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLU024Z Power MOSFET Infineon
AUIRLU024N Power MOSFET Infineon
AUIRLU2905 Power MOSFET Infineon
AUIRLU3114Z Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRLU024N Power MOSFET
AUIRLU2905 HEXFET Power MOSFET
AUIRLU3110Z Power MOSFET
AUIRLU3114Z Power MOSFET
AUIRL1404L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 97753 AUIRLR024Z AUIRLU024Z Features ● Logic Level ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .