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CPV362M4F - IGBT SIP MODULE

General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all "tail" losses TM.

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www.DataSheet4U.com PD -5.046 CPV362M4F IGBT SIP MODULE Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 D3 15 10 Q6 D6 Fast IGBT D5 16 Q5 Product Summary 7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.