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International Rectifier Electronic Components Datasheet

CPV362M4F Datasheet

IGBT SIP MODULE

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PD -5.046
CPV362M4F
IGBT SIP MODULE
Fast IGBT
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz)
See Fig. 1 for Current vs. Frequency curve
3 Q1
6 Q2
1
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7 13
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw
Max.
600
8.8
4.8
26
26
3.4
26
±20
2500
23
9.1
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC(IGBT)
RθJC(DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.1
20 (0.7)
Max.
5.5
9.0
–––
–––
Units
°C/W
g (oz)
9/16/97


International Rectifier Electronic Components Datasheet

CPV362M4F Datasheet

IGBT SIP MODULE

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www.DataSheet4U.com
CPV362M4F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.72 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.41 1.7
IC = 4.8A
VGE = 15V
––– 1.66 ––– V IC = 8.8A
See Fig. 2, 5
––– 1.42 –––
IC = 4.8A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 2.9 5.0 ––– S VCE = 100V, IC = 4.8A
ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.4 1.7 V IC = 8.0A
See Fig. 13
––– 1.3 1.6
IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
––– 30 45
––– 4.0 6.0
––– 13 20
––– 49 –––
––– 22 –––
––– 200 300
––– 214 320
––– 0.23 –––
––– 0.33 –––
––– 0.45 0.70
––– 48 –––
––– 25 –––
––– 435 –––
––– 364 –––
––– 0.93 –––
––– 340 –––
––– 63 –––
––– 5.9 –––
––– 37 55
––– 55 90
––– 3.5 50
––– 4.5 8.0
––– 65 138
––– 124 360
––– 240 –––
––– 210 –––
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/µs
IC = 4.8A
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 4.8A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 10,11, 18
IC = 4.8A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C
14
TJ = 25°C See Fig.
TJ = 125°C
15
IF = 8.0A
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
Notes:
 Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
‚ VCC=80%(VCES), VGE=20V, L=10µH, „ Pulse width 5.0µs, single
RG= 50, ( See fig. 19 )
shot.
ƒ Pulse width 80µs; duty factor 0.1%.


Part Number CPV362M4F
Description IGBT SIP MODULE
Maker International Rectifier
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CPV362M4F Datasheet PDF






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