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International Rectifier Electronic Components Datasheet

CPV362MM Datasheet

IGBT SIP MODULE Short Circuit Rated Fast IGBT

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PD - 5.031
CPV362MM
IGBT SIP MODULE
Short Circuit Rated Fast IGBT
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
1
3 Q1
6 Q2
D1
9 Q3
4
D2
12 Q4
D3
15 Q5
10
D4
18 Q6
D5
16
D6
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7 13
4.6 ARMS per phase (1.4 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
19
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
IMS-2
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
7.9
4.6
16
16
3.4
16
10
± 20
2500
23
9.1
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
0.1
20 (0.7)
Max.
5.5
9.0
Units
°C/W
g (oz)
C-409
Revision 2
To Order


International Rectifier Electronic Components Datasheet

CPV362MM Datasheet

IGBT SIP MODULE Short Circuit Rated Fast IGBT

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CPV362MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.42 — V/°C VGE = 0V, IC = 1.0mA
— 2.2 3.3
IC = 4.6A
VGE = 15V
— 2.8 — V IC = 7.9A
See Fig. 2, 5
— 2.5 —
IC = 4.6A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
2.7 3.8 — S VCE = 100V, I C =8.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1700
VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop
— 1.4 1.7 V IC = 8.0A
See Fig. 13
IGES Gate-to-Emitter Leakage Current
— 1.3 1.6
IC = 8.0A, T J = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 16 24
IC = 8.0A
— 3.6 5.2
— 6.0 9.0
nC VCC = 400V
See Fig. 8
— 66 —
TJ = 25°C
— 28 — ns IC = 4.6A, V CC = 480V
— 140 210
VGE = 15V, R G = 50
— 53 100
Energy losses include "tail" and
— 0.18 —
diode reverse recovery.
— 0.14 — mJ See Fig. 9, 10, 11, 18
— 0.32 0.48
10 — —
— 64 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 50, VCPK < 500V
TJ = 150°C, See Fig. 9, 10, 11, 18
— 25 —
— 240 —
ns IC = 4.6A, V CC = 480V
VGE = 15V, R G = 50
— 160 —
Energy losses include "tail" and
— 0.56 — mJ diode reverse recovery.
— 365 —
— 47 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 4.8 —
ƒ = 1.0MHz
— 37 55 ns TJ = 25°C See Fig.
— 55 90
— 3.5 5.0
TJ = 125°C
14
A TJ = 25°C See Fig.
IF = 8.0A
— 4.5 8.0
TJ = 125°C
15
— 65 138 nC TJ = 25°C See Fig.
V R = 200V
— 124 360
TJ = 125°C
16
— 240 — A/µs TJ = 25°C See Fig.
di/dt = 200A/µs
— 210 —
TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-410
To Order


Part Number CPV362MM
Description IGBT SIP MODULE Short Circuit Rated Fast IGBT
Maker International Rectifier
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CPV362MM Datasheet PDF






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