CPV364M4K Datasheet | International Rectifier

Features - Short Circuit Rated Ultra Fast: Optimized for high operating frequencies >5.0 k Hz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V - Fully isolated printed circuit board mount package - Switching-loss rating includes all "tail" losses - HEXFREDTM soft ultrafast diodes - Optimized for high operating frequency (over 5k Hz) See Fig. 1 for Current vs. Frequency curve Product Summary Output Current in a Typical 20 k Hz Motor Drive 11 ARMS per phase (3.1 k W total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than parable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 24 13 48 48 9.3 ±20 2500 63 25 -55 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf- in ( 0.55-0.8 N- m) Units µs V VRMS W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case...