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International Rectifier Electronic Components Datasheet

CPV364M4KPBF Datasheet

IGBT SIP MODULE

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Bulletin I-27256 09/06
CPV364M4KPbF
IGBT SIP MODULE
Short Circuit Rated UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
1
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10μs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
3 Q1
6 Q2
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
• Optimized for high operating frequency (over 5kHz)
• Totally Lead-Free and RoHs Compliant
7 13 19
Product Summary
Output Current in a Typical 20 kHz Motor Drive
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Isolated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at
a premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
24
13
48
48
9.3
±20
2500
63
25
-55 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in ( 0.55-0.8 N•m)
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
2.2
3.7
–––
–––
www.irf.com
Units
V
A
μs
V
VRMS
W
°C
Units
°C/W
g (oz)
1


International Rectifier Electronic Components Datasheet

CPV364M4KPBF Datasheet

IGBT SIP MODULE

No Preview Available !

CPV364M4KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltagee 600 ––– ––– V VGE = 0V, IC = 250μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.80 2.3
IC = 13A
VGE = 15V
––– 1.80 ––– V IC = 24A
See Fig. 2, 5
––– 1.56 1.73
IC = 13A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250μA
gfe Forward Transconductance f 11 18 ––– S VCE = 100V, IC = 10A
ICES
Zero Gate Voltage Collector Current
––– ––– 250 μA VGE = 0V, VCE = 600V
––– ––– 3500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.3 1.7 V IC = 15A
See Fig. 13
––– 1.2 1.6
IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 110 170
IC = 13A
— 14 21 nC VCC = 400V See Fig.8
— 49 74
VGE = 15V
— 50 —
— 30 —
ns TJ = 25°C
— 110 170
IC = 13A, VCC = 480V
— 91 140
VGE = 15V, RG = 10Ω
— 0.56 —
Energy losses include "tail"
— 0.28 — mJ and diode reverse recovery
— 0.84 1.1
See Fig. 9,10, 18
10 — —
— 47 —
— 30 —
— 250 —
— 150 —
μs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
TJ = 150°C, See Fig. 11,18
ns
IC = 13A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
— 1.28 — mJ and diode reverse recovery
— 7.5 — nH Measured 5mm from package
— 1600 —
— 130 —
— 55 —
VGE = 0V
pF VCC = 30V See Fig. 7
ƒ = 1.0MHz
— 42 60 ns TJ = 25°C See Fig.
— 74 120
TJ = 125°C 14
IF = 15A
— 4.0 6.0 A TJ = 25°C See Fig.
— 6.5 10
TJ = 125°C 15
VR = 200V
— 80 180 nC TJ = 25°C See Fig.
— 220 600
TJ = 125°C
16 di/dt = 200Aμs
— 188 — A/μs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
www.irf.com


Part Number CPV364M4KPBF
Description IGBT SIP MODULE
Maker International Rectifier
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