CPV364MU Datasheet | International Rectifier

Features - - - - Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5k Hz) See Fig. 1 for Current vs. Frequency curve Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 Ultra-Fast IGBT D3 15 Q5 D5 16 D6 10 Q6 Product Summary Output Current in a Typical 20 k Hz Motor Drive 5.4 ARMS per phase (1.7 k W total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than parable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 20 10 60 60 9.3 60 ±20 2500 63 25 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf- in (0.55-0.8 N- m) Units V VRMS W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in...