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F630NS - IRF630NS

General Description

Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • 4 9 ) 3 .54 (.13 9 ) -A 6.4 7 (.255 ) 6.1 0 (.240 ) -B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.