F630N Description
F630N-VB F630N-VB Datasheet N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.270 at VGS = 10 V ID (A) 10 TO-220AB.
F630N Key Features
- DT-Trench Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC