Description
Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 4 9 ) 3 .54 (.13 9 ) -A 6.4 7 (.255 ) 6.1 0 (.240 )
-B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 )
4 15 .24 (.6 00 ) 14 .84 (.5 84 )
1.1 5 (.0 45) M IN 1 2 3
L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14 .09 (.5 55 ) 13 .47 (.5 30 )
4 .0 6 (.16 0 ) 3 .5 5 (.14 0 )
3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S :
0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M
3X
0.5 5 (.0 22) 0.4 6 (.0 18)
0 .3 6 (.0 1 4)
2 .92 (.11 5 ) 2 .64 (.
F630NS Datasheet
