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FA38SA50LC Power MOSFET

FA38SA50LC Description

l Fully Isolated Package l Easy to Use and Parallel l Low On-Resistance l Dynamic dv/dt Rating l Fully Avalanche Rated G l Simple Drive Requirem.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

FA38SA50LC Applications

* at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Cu

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Power MOSFET International Rectifier
International Rectifier FA38SA50LC-like datasheet