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FA38SA50LC - Power MOSFET

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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    l Fully Isolated Package l Easy to Use and Parallel l Low On-Resistance l Dynamic dv/dt Rating l Fully Avalanche Rated G l Simple Drive Requirements l Low Drain to Case Capacitance l Low Internal Inductance Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
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