G4BC20FD Datasheet (PDF) Download
International Rectifier
G4BC20FD

Key Features

  • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode)
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits
  • Generation -4 IGBTs offer highest efficiencies available
  • IGBTs optimized for specific application conditions
  • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB