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International Rectifier Electronic Components Datasheet

G4BC20FD Datasheet

IRG4BC20FD

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PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Benefits
G
E
n-channel
Generation -4 IGBTs offer highest efficiencies
available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
64
64
7.0
32
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
7/11/2000


International Rectifier Electronic Components Datasheet

G4BC20FD Datasheet

IRG4BC20FD

No Preview Available !

www.datasheet4u.com
IRG4BC20FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance T
ICES Zero Gate Voltage Collector Current
3.0
2.9
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
—— V
0.72 V/°C
1.66 2.0
2.06 V
1.76
6.0
-11 mV/°C
5.1 S
250 µA
1700
1.4 1.7 V
1.3 1.6
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 9.0A
VGE = 15V
IC = 16A
See Fig. 2, 5
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
Typ. Max. Units
27 40
4.2 6.2 nC
9.9 15
43
20 ns
240 360
150 220
0.25
0.64 mJ
0.89 1.3
41
22 ns
320
290
1.35 mJ
7.5 nH
540
37 pF
7.0
37 55 ns
55 90
3.5 5.0 A
4.5 8.0
65 138 nC
124 360
240 A/µs
210
Conditions
IC = 9.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 11, 18
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 8.0A
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C 16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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Part Number G4BC20FD
Description IRG4BC20FD
Maker International Rectifier
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G4BC20FD Datasheet PDF






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