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International Rectifier Electronic Components Datasheet

G4PC30KD Datasheet

IRG4PC30KD

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PD -91587A
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
www.DataSheet4U.com VGE = 15V
Combines low conduction losses with high
switching speed
G
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
E
n-channel
ultrasoft recovery antiparallel diodes
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000


International Rectifier Electronic Components Datasheet

G4PC30KD Datasheet

IRG4PC30KD

No Preview Available !

IRG4PC30KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
www.DataSheet4U.com
V(BR)CES Collector-to-Emitter Breakdown VoltageS
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
0.54 V/°C VGE = 0V, IC = 1.0mA
2.21 2.7
IC = 16A
VGE = 15V
2.88 V IC = 28A
See Fig. 2, 5
2.36
IC = 16A, TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
5.4 8.1 S VCE = 100V, IC = 16A
— — 250 µA VGE = 0V, VCE = 600V
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
1.4 1.7 V IC = 12A
See Fig. 13
1.3 1.6
IC = 12A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
67 100
IC = 16A
11 16 nC VCC = 400V
25 37
VGE = 15V
See Fig.8
60
42 ns TJ = 25°C
160 250
IC = 16A, VCC = 480V
80 120
VGE = 15V, RG = 23
0.60
Energy losses include "tail"
0.58 mJ and diode reverse recovery
1.18 1.6
See Fig. 9,10,14
10 — —
58
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
See Fig. 11,14
42
210
ns IC = 16A, VCC = 480V
VGE = 15V, RG = 23Ω,
160
Energy losses include "tail"
1.69 mJ and diode reverse recovery
13 nH Measured 5mm from package
920
VGE = 0V
110
27
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
42 60 ns TJ = 25°C See Fig.
80 120
TJ = 125°C 14
IF = 12A
3.5 6.0
5.6 10
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
80 180 nC TJ = 25°C See Fig.
220 600
TJ = 125°C
16 di/dt = 200Aµs
180 A/µs TJ = 25°C See Fig.
160
TJ = 125°C 17
2 www.irf.com


Part Number G4PC30KD
Description IRG4PC30KD
Maker International Rectifier
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G4PC30KD Datasheet PDF






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