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G4PC30S - IRG4PC30S

Key Features

  • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR
G4PC30KD IRG4PC30KD
G4PC30U IRG4PC30U
G4PC40FD IRG4PC40FD
G4PC40K IRG4PC40K

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.