Datasheet Summary
PD -91587A
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, .. VGE = 15V
- bines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
Short Circuit Rated UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A n-ch an nel
Benefits
- Latest generation 4 IGBTs offer highest power density motor controls possible
- HEXFREDTM diodes optimized for...