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International Rectifier Electronic Components Datasheet

G7S313UPBF Datasheet

IRG7S313UPBF

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PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.35
160
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG7S313UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
40
20
160
78
31
0.63
-40 to + 150
300
Typ.
–––
Max.
1.6
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
9/11/09
Free Datasheet http://www.datasheet4u.net/


International Rectifier Electronic Components Datasheet

G7S313UPBF Datasheet

IRG7S313UPBF

No Preview Available !

IRG7S313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltage
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient
VCE(on)
Static Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
330 ––– ––– V VGE = 0V, ICE = 250μA
––– 0.4 ––– V/°C Reference to 25°C, ICE = 1mA
––– 1.21 1.45
eVGE = 15V, ICE = 12A
––– 1.35 –––
eVGE = 15V, ICE = 20A
e1.75 ––– V VGE = 15V, ICE = 40A
––– 2.14 –––
eVGE = 15V, ICE = 60A
––– 1.41 –––
eVGE = 15V, ICE = 20A, TJ = 150°C
2.2 ––– 4.7 V VCE = VGE, ICE = 1.0mA
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
25 150 μA VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 47 ––– S VCE = 25V, ICE = 12A
e––– 33 ––– nC VCE = 240V, IC = 12A, VGE = 15V
––– 12 –––
––– 1.0 –––
IC = 12A, VCC = 196V
––– 13 ––– ns RG = 10Ω, L=210μH
––– 65 –––
TJ = 25°C
––– 68 –––
––– 11 –––
IC = 12A, VCC = 196V
––– 14 ––– ns RG = 10Ω, L=200μH, LS= 150nH
––– 86 –––
TJ = 150°C
––– 190 –––
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
––– 480 –––
L = 220nH, C= 0.20μF, VGE = 15V
μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 570 –––
L = 220nH, C= 0.20μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 880 –––
––– 47 –––
––– 26 –––
––– 4.5 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.05, ton=2μsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400μs; duty cycle 2%.
2
www.irf.com
Free Datasheet http://www.datasheet4u.net/


Part Number G7S313UPBF
Description IRG7S313UPBF
Maker International Rectifier
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