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International Rectifier Electronic Components Datasheet

GA200SA60SP Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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Bulletin I27235 07/06
INSULATEDGATEBIPOLARTRANSISTOR
GA200SA60SP
Standard Speed IGBT
Features
• Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package ( 2,500 volt AC)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline
• UL pending
• Totally Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 100A
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy e
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
SOT-227
Max.
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Thermal Resistance
RθJC
RθCS
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
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Typ.
–––
0.05
30
Max.
0.20
–––
–––
Units
V
A
V
mJ
V
W
°C
Units
°C/W
gm
1


International Rectifier Electronic Components Datasheet

GA200SA60SP Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

GA200SA60SP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V VGE = 0V, IC = 250μA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage f 18 — —
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.62 —
V VGE = 0V, IC = 1.0A
V/°C VGE = 0V, IC = 1.0mA
— 1.10 1.3
IC = 100A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 1.33 — V IC = 200A
See Fig.2, 5
— 1.02 —
IC = 100A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 2 mA
gfe Forward Transconductance g
90 150 —
S VCE = 100V, IC = 100A
ICES
Zero Gate Voltage Collector Current
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 10V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±250 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
— 770 1200
— 100 150
— 260 380
— 78 —
— 56 —
— 890 1300
— 390 580
— 0.98 —
— 17.4 —
— 18.4 25.5
— 72 —
— 60 —
— 1500 —
— 660 —
— 35.7 —
— 5.0 —
— 16250 —
— 1040 —
— 190 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 100A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0Ω
Energy losses include "tail"
See Fig. 9, 10, 13
TJ = 150°C,
IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0Ω
Energy losses include "tail"
See Fig. 10,11, 13
Between lead,
and center of the die contact
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
c Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 15 )
f Pulse width 80μs; duty factor 0.1%.
d VCC = 80%(VCES), VGE = 20V, L = 10μH, RG = 2.0Ω,
(See fig. 14)
g Pulse width 5.0μs, single shot.
e Repetitive rating; pulse width limited by maximum
junction temperature.
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Part Number GA200SA60SP
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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GA200SA60SP Datasheet PDF






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