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GA200SA60SP - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz.
  • Lowest conduction losses available.
  • Fully isolated package ( 2,500 volt AC).
  • Very low internal inductance ( 5 nH typ. ).
  • Industry standard outline.
  • UL pending.
  • Totally Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits.
  • Designed for increased operating efficiency in pow.

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Full PDF Text Transcription for GA200SA60SP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GA200SA60SP. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating f...

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tandard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline • UL pending • Totally Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

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