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International Rectifier Electronic Components Datasheet

GA200TS60UX Datasheet

Ultra-FastTM Speed IGBT

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www.DataSheet.co.kr
Bulletin I27221 03/06
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast:Optimizedforhighoperating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Verylowconduction andswitchinglosses
• HEXFREDTMantiparalleldiodeswithultra-soft
recovery
• Industry standard package
• UL approved
GA200TS60UX
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.74V
@ VGE = 15V, IC = 200A
Benefits
Increasedoperatingefficiency
• Direct mounting to heatsink
• Performanceoptimizedforpowerconversion:
UPS, SMPS, Welding
• Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings
VCES
IC
ICM
ILM
IFM
VGE
VISOL
PD
Parameters
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 85°C
www.irf.com
Max
600
265
400
400
400
± 20
2500
625
325
Units
V
A
V
W
1
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GA200TS60UX Datasheet

Ultra-FastTM Speed IGBT

No Preview Available !

www.DataSheet.co.kr
GA200TS60UX
Bulletin I27221 03/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBRCES Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 1mA
VCE(on) Collector-to-Emitter Voltage
1.74 2.2
VGE = 15V, IC = 200A
1.79 2.25
VGE = 15V, IC = 200A, TJ = 125°C
VGE(th) Gate Threshold Voltage
3 4.4 6
IC = 0.25mA
ΔVGE(th)/ΔTJ Temperat.Coeff.ofThresholdVoltage
- 11 mV/°C VCE= VGE, IC = 0.25mA
g fe Forward Transconductance
220 S VCE = 20V, IC = 200A
ICES
Collector-to-Emiter Leakage Current
0.014 1 mA VGE = 0V, VCE = 600V
10 VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage drop
4.2 6.0 V IC = 200A, VGE = 0V
4.4 6.2
IC = 200A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg TotalGateCharge
Qge Gate-EmitterCharge
Qgc Gate-CollectorCharge
td(on) Turn-OnDelayTime
tr RiseTime
td(off) Turn-OffDelayTime
tf FallTime
Eon Turn-OnSwitchingEnergy
Eoff Turn-OffSwitchingEnergy
Ets TotalSwitchingEnergy
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
trr Diode Reverse Recovery Time
Irr Diode Peak ReverseCurrent
Qrr Diode Recovery Charge
di(rec)M/dt Diode Peak Rate of Fall of Recovery
During tb
900
125
306
342
194
366
213
5
16
21
— 20068 —
— 1254 —
— 261 —
— 179 —
— 120 —
— 10714 —
— 1922 —
nC IC = 200A
IC = 270A, VGE = 15V
ns
mJ
pF
ns
A
μC
A/μs
IC = 200A
VCC = 360V
VGE = ± 15V
TJ = 125°C
RG1 = 15Ω
RG2 = 0Ω
VGE = 0V
VCC = 30V
ƒ = 1 MHz
IC = 200A
VCC = 360V
di/dt=1300A/μs
Thermal- Mechanical Specifications
TJ
TSTG
RthJC
RthCS
T
Parameters
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case IGBT
Case-to-Sink
Per Diode
Per Module
Mounting torque Case to heatsink
Weight
Case to terminal 1, 2, 3
Min
- 40
- 40
Typ
0.1
200
Max
150
125
0.2
0.4
6
5
2
Units
°C
°C/ W
Nm
g
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GA200TS60UX
Description Ultra-FastTM Speed IGBT
Maker International Rectifier
PDF Download

GA200TS60UX Datasheet PDF






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