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GB14C40L Datasheet IRGB14C40L

Manufacturer: International Rectifier (now Infineon)

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General Description

Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel.

Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC www.irf.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.1

Overview

PD - 93891A www.DataSheet4U.com Ignition IGBT IGBT with on-chip Gate-Emitter and Gate-Collector.

Key Features

  • •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition.

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