GB10RF120K Description
Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE.
GB10RF120K Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10μs Short Circuit Capability
- Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design
- TOTALLY LEAD-FREE
- Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to H