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PD - 93891A
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Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.
Absolute Maximum Ratings
Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.5 Unit V A A mA mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.