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International Rectifier Electronic Components Datasheet

HFA16TB120S Datasheet

Soft Recovery Diode

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Bulletin PD -20605A rev. B 10/05
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA16TB120S
Ultrafast, Soft Recovery Diode
(K)
BASE
+
2
(N/C) 1
3
_ (A)
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 16A
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
di(rec)M/dt (typ.)* = 76A/µs
Description
International Rectifier's HFA16TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16TB120S is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
D2 Pak
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
1200
16
190
64
151
60
-55 to +150
Units
V
A
°C
W
1


International Rectifier Electronic Components Datasheet

HFA16TB120S Datasheet

Soft Recovery Diode

No Preview Available !

HFA16TB120S
Bulletin PD-20605 rev. B 11/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
IRM
CT
LS
Cathode Anode Breakdown Voltage
Max Forward Voltage
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
1200
2.5
3.2 3.93
2.3 2.7
0.75 20
375 2000
27 40
V
3.0
V
µA
pF
8.0 nH
IR = 100µA
IF = 32A
IF = 16A
See Fig. 1
IF = 16A, TJ = 125°C
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD R
VR = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5, 10
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min Typ Max Units
Test Conditions
30
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120
76
ns
A
nC
A/µs
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 16A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA ‚
Wt
Parameter
Min Typ Max Units
Lead Temperature
300 °C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
0.83 K/W
80
2.0 g
0.07 (oz)
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
2 www.irf.com


Part Number HFA16TB120S
Description Soft Recovery Diode
Maker International Rectifier
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HFA16TB120S Datasheet PDF






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