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International Rectifier Electronic Components Datasheet

IPS021L Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD60145-K
IPS021L
FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS021L is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET®
POWER MOSFET and a gate driver. It offers full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 5A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Typical Connection
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
150m(max)
50V
5A
1.5µs
Package
3 Lead SOT223
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1


International Rectifier Electronic Components Datasheet

IPS021L Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS021L
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm
copper thickness..
Symbol Parameter
Min.
Vds
Vin
Iin, max
Isd cont.
Maximum drain to source voltage
Maximum Input voltage
Maximum IN current
Diode max. continuous current (1)
(rth=125oC/W)
-0.3
-10
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation(1)
(rth=125oC/W)
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor. Max. storage temperature
-55
Tj max. Max. junction temperature
-40
Max.
47
7
+10
Units
V
mA
Test Conditions
1.4 A
10
1
4
0.5
150
+150
W
C=100pF, R=1500Ω,
kV C=200pF, R=0Ω, L=10µH
oC
Thermal Characteristics
Symbol Parameter
Rth1
Rth2
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Min.
Typ. Max. Units Test Conditions
100
50
oC/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
VIH High level input voltage
VIL Low level input voltage
Ids Continuous drain current
Tamb=85oC
(TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC)
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
— 35
46
0 0.5
— 1.4
0.5 5
—1
01
V
A
k
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
www.irf.com


Part Number IPS021L
Description FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
PDF Download

IPS021L Datasheet PDF






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