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Data Sheet No.PD 60148-K
IPS021(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
• • • • •
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff Packages 150mΩ (max) 50V 5A 1.5µs
Description
The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.
IPS021S Datasheet
