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International Rectifier Electronic Components Datasheet

IPS021S Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD 60148-K
IPS021(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS021/IPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
150m(max)
50V
5A
1.5µs
Packages
3-Lead D2Pak
IPS021S
Typical Connection
3-Lead TO-220
IPS021
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1


International Rectifier Electronic Components Datasheet

IPS021S Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS021(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter
Min.
Vds
Vin
Iin, max
Isd cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continous current (1)
(rth=62oC/W) IPS021
-0.3
-10
(rth=10oC/W) IPS021
(rth=80oC/W) IPS021S
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation(1)
(rth=62oC/W) IPS021
(rth=80oC/W) IPS021S
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor. Max. storage temperature
-55
Tj max. Max. junction temperature.
-40
Tlead Lead temperature (soldering, 10 seconds) —
Max.
47
7
+10
Units
V
mA
Test Conditions
2.8
8A
2.2
10A
2W
1.56
4 C=100pF, R=1500Ω,
0.5 kV C=200pF, R=0Ω, L=10µH
150
150 oC
300
Thermal Characteristics
Symbol Parameter
Rth 1
Rth 2
Rth 1
Rth 2
Rth 3
Thermal resistance free air
Thermal resistance junction to case
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
Min.
Typ.
60
5
80
50
5
Max. Units Test Conditions
TO-220
oC/W
D2PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
VIH High level input voltage
VIL Low level input voltage
Ids Continuous drain current
Tamb=85oC
(TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC)
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
— 35
46
0 0.5
— 1.8
0.5 5
—1
01
V
A
k
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
2 www.irf.com


Part Number IPS021S
Description FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS021S Datasheet PDF






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