IPS024G
Description
The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active devices combine a HEXFET® POWER MOSFET and a gate driver.
Key Features
- Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 6A 1.5µs
